<?xml version="1.0" encoding="UTF-8"?>
<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns="http://purl.org/rss/1.0/" xmlns:taxo="http://purl.org/rss/1.0/modules/taxonomy/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:syn="http://purl.org/rss/1.0/modules/syndication/" xmlns:admin="http://webns.net/mvcb/">
  <channel rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems">
    <title>gmane.science.microelectromechanical-systems</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems</link>
    <description/>
    <syn:updatePeriod>hourly</syn:updatePeriod>
    <syn:updateFrequency>1</syn:updateFrequency>
    <syn:updateBase>1901-01-01T00:00+00:00</syn:updateBase>
    <items>
      <rdf:Seq>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18851"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18850"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18849"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18848"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18847"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18846"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18845"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18844"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18843"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18842"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18841"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18840"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18839"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18838"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18837"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18836"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18835"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18834"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18833"/>
        <rdf:li rdf:resource="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18832"/>
      </rdf:Seq>
    </items>
    <image rdf:resource="http://gmane.org/img/gmane-25t.png"/>
    <textinput rdf:resource=""/>
  </channel>
  <image rdf:about="http://gmane.org/img/gmane-25t.png">
    <title>Gmane</title>
    <url>http://gmane.org/img/gmane-25t.png</url>
    <link>http://gmane.org</link>
  </image>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18851">
    <title>MEMS Express from MNX</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18851</link>
    <description>&lt;pre&gt;View Mailing Online [url: http://www.memsnet.org/news/mailings/897/]


MEMS Express is brought to you by MNX [url: http://www.mems-exchange.org]:
your microsystem design and fabrication partner



MEMS technology

LAST POWER to boost SiC &amp;amp;amp;amp; GaN power microelectronics
The consortium members are STMicroelectronics (Italy), project
coordinator, LPE/ETC (Italy), Institute for Microelectronics and
Microsystems of the National Research Council - IMM-CNR (Italy),
Foundation for Research &amp;amp;amp; Technology-Hellas - FORTH (Greece ... today Compound Semiconductor
[url: http://www.compoundsemiconductor.net/csc/news-details/id/19736362/name/LAST-POWER-to-boost-SiC-&amp;amp;amp;-GaN-power-microelectronic.html]

ULIS Launches Thermal Sensor Array Product Line, within Scope of European ...
Led by ULIS, MIRTIC project partners include: CEA-Leti, a leading
microelectronic and nanotechnology research center, Integrated Systems
Development, a global systems integrator, Metaio, a developer of
augmented reality technology and Schne&lt;/pre&gt;</description>
    <dc:creator>MEMS News</dc:creator>
    <dc:date>2013-05-17T19:21:35</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18850">
    <title>MEMS Express from MNX</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18850</link>
    <description>&lt;pre&gt;View Mailing Online [url: http://www.memsnet.org/news/mailings/896/]


MEMS Express is brought to you by MNX [url: http://www.mems-exchange.org]:
your microsystem design and fabrication partner



MEMS technology

UV Laser delivers greater than 45 W output.
Spectra-Physics&amp;amp;#39; new laser has been demonstrated to enable major
advances in the fast, precision manufacturing of many types of
microelectronic devices and components. “With over 10,000 UV lasers
deployed, Spectra-Physics is the leader in UV lasers, ... yesterday ThomasNet Industrial News Room
[url: http://news.thomasnet.com/fullstory/UV-Laser-delivers-greater-than-45-W-output-20008294]

Tech Gets Phones On Your Wavelength
In work to be presented in June at the International Conference on
Solid-State Sensors, Actuators and Microsystems, Dana Weinstein,
professor of electrical engineering and computer science, and Laura
Popa, a graduate student in physics, built a ... today Discovery News
[url: http://news.discovery.com/tech/gear-and-gadgets/tech-get&lt;/pre&gt;</description>
    <dc:creator>MEMS News</dc:creator>
    <dc:date>2013-05-16T21:26:05</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18849">
    <title>Re: [mems-talk] EEG Devices and Sensors</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18849</link>
    <description>&lt;pre&gt;Hi Anton,
   Yes, there are a number of commercial systems.  See
http://www.emotiv.com/ they have a whole headset.  There's also a really
interesting TED talk about a mind-reading headset -
http://www.youtube.com/watch?v=fVhggGSjXVg

Cheers,
  Michael


On Wed, May 15, 2013 at 8:21 PM, masgandhul &amp;lt;masgandhul&amp;lt; at &amp;gt;gmail.com&amp;gt; wrote:

_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>Michael Martin</dc:creator>
    <dc:date>2013-05-16T14:11:01</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18848">
    <title>[mems-talk] EEG Devices and Sensors</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18848</link>
    <description>&lt;pre&gt;Hello everyone,

I'm a new member here, I did not know however, my question had been
asked before.

Is there any or many devices or sensors that able to handle EEG for
full head reading? not only in some part of our head, but for the
whole head.

Thank you

&lt;/pre&gt;</description>
    <dc:creator>masgandhul</dc:creator>
    <dc:date>2013-05-16T00:21:31</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18847">
    <title>MEMS Express from MNX</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18847</link>
    <description>&lt;pre&gt;View Mailing Online [url: http://www.memsnet.org/news/mailings/895/]


MEMS Express is brought to you by MNX [url: http://www.mems-exchange.org]:
your microsystem design and fabrication partner



MEMS technology

ULIS Launches Thermal Sensor Array Product Line, Within Scope Of European ...
Led by ULIS, MIRTIC project partners include: CEA-Leti, a leading
microelectronic and nanotechnology research center, Integrated Systems
Development, a global systems integrator, Metaio, a developer of
augmented reality technology and Schneider ... today Photonics Online
[url: http://www.photonicsonline.com/Doc/ulis-thermal-sensor-array-product-line-european-mirtic-project-0001]

Solar Panels as Inexpensive as Paint?
... in nanphotonics, biophotonics, hybrid inorganic/organic materials
and devices, nonlinear and fiber optics, metamaterials, nanoplasmonics,
optofluidics, microelectromechanical systems (MEMS), biomedical
microelectromechanical systems (BioMEMs), ... today Lab Manager Magazine
[url: http://www.labmanager.com&lt;/pre&gt;</description>
    <dc:creator>MEMS News</dc:creator>
    <dc:date>2013-05-15T20:07:59</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18846">
    <title>MEMS Express from MNX</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18846</link>
    <description>&lt;pre&gt;View Mailing Online [url: http://www.memsnet.org/news/mailings/894/]


MEMS Express is brought to you by MNX [url: http://www.mems-exchange.org]:
your microsystem design and fabrication partner



MEMS technology

How to improve heat dissipation in 3-D microelectronic systems
“What we are talking about here is boiling that will take place in
passages that are produced by microfabrication techniques that may be
only 50 micrometers by 50 micrometers. The physics of what will be going
on there is very different than what ... today Design World Network
[url: http://www.designworldonline.com/how-to-improve-heat-dissipation-in-3-d-microelectronic-systems/]

First precise MEMS output measurement technique unveiled - R&amp;amp;amp;amp;D Magazine
This is an example of a MEMS device whose accurate resonant frequency
was measured by the The commercial application of MEMS, or
microelectromechanical systems, will receive a major boost today
following the presentation of a brand new way to ... today R &amp;amp;amp; D Magazine
[url: htt&lt;/pre&gt;</description>
    <dc:creator>MEMS News</dc:creator>
    <dc:date>2013-05-14T19:53:47</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18845">
    <title>MEMS Express from MNX</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18845</link>
    <description>&lt;pre&gt;View Mailing Online [url: http://www.memsnet.org/news/mailings/893/]


MEMS Express is brought to you by MNX [url: http://www.mems-exchange.org]:
your microsystem design and fabrication partner



MEMS technology

Optical Gratings Could Make Quantum Tech Portable
While advances have been made in producing portable sensors, simplifying
atomic cooling and loading using microfabrication techniques has proved
difficult, the researchers said. Their work addresses the problem by
delivering &amp;amp;quot;ten thousand times more ... 2013-05-10 Photonics.com
[url: http://www.photonics.com/Article.aspx?AID=53866]

Industrial Picosecond Laser suits micromachining applications.
Santa Clara, CA – Spectra-Physics®, a Newport Corporation brand,
introduces Spirit™ ps 1040-10, an industrial-grade picosecond laser for
precision micromachining applications. The new laser delivers high
finesse with exceptional beam quality (M2&amp;amp;lt; 1.2 ... 2013-05-10 ThomasNet Industrial News Room
[url: http://news.thomasnet.com/fullstory/Industria&lt;/pre&gt;</description>
    <dc:creator>MEMS News</dc:creator>
    <dc:date>2013-05-13T19:09:38</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18844">
    <title>[mems-talk] UV 26-3.0</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18844</link>
    <description>&lt;pre&gt;Dear all,

I'm currently using photoresists uv26. I need to reflow the resist. But I tried several temperature still it couldn't hit the profile I want. At lower temperature like 165C the reflow is not enough; when I try to go higher like 180C the resist burnt. 
Any comments or advice about this photoresists is very much welcomed.

Thank you in advance.

Best Regards,
Jocelyn

Sent from my iPhone
_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>Jocelyn Ng</dc:creator>
    <dc:date>2013-05-10T07:31:11</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18843">
    <title>MEMS Express from MNX</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18843</link>
    <description>&lt;pre&gt;View Mailing Online [url: http://www.memsnet.org/news/mailings/892/]


MEMS Express is brought to you by MNX [url: http://www.mems-exchange.org]:
your microsystem design and fabrication partner



MEMS technology

New Device Uses Microtips for Quick DNA Extraction from Liquid Samples (w ...
The tiny probes, called microtips and nanotips, were designed and built
at the UW in a micro-fabrication facility where a technician can make up
to 1 million tips in a year, which is key in proving that large-scale
production is feasible, [Jae-Hyun ... yesterday Medgadget.com
[url: http://www.medgadget.com/2013/05/new-device-uses-microtips-for-quick-dna-extraction-from-liquid-samples-wvideo.html]

QM researchers lead trial of revolutionary new device-based treatment for high ...
... in biomarker discovery (“pathogen-specific fingerprints”) which
require minimal sample processing steps, nano-enabled sensors,
temperature-stable biomimetic capture coatings, nanoparticles,
microelectronics, microfluidics, wireless network&lt;/pre&gt;</description>
    <dc:creator>MEMS News</dc:creator>
    <dc:date>2013-05-09T19:23:50</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18842">
    <title>Re: [mems-talk] Properties of Ca modified Lead Titanate</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18842</link>
    <description>&lt;pre&gt;try www.matweb.com



On Thu, May 9, 2013 at 4:48 AM, Md A Muztoba
&amp;lt;mamuztoba11&amp;lt; at &amp;gt;students.desu.edu&amp;gt;wrote:

_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>Azeem Zulfiqar</dc:creator>
    <dc:date>2013-05-09T16:49:52</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18841">
    <title>Re: [mems-talk] [!! SPAM]  Re:  Resist thickness for nitride etch</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18841</link>
    <description>&lt;pre&gt;Ahmad:

Typical etch chemistries for SiN will attack the PR as well. You are seeing profilometry step heights of &amp;lt;2.4um because you are removing some of the PR as well as the 0.4um SiN layer.  You would need to strip the remaining PR and take another profilomtery measurement to get an accurate measure of the SiN/Si step height. (The SiN etch will likely etch the underlying Si as well as the SiN.) Typical etch selectivites for fluorine-based SiN-etch chemistries are in the range of 1-2:1, so you'd expect to remove about 2600-5200A of the PR for a 130% etch. 

To address your original question about how much PR is required, the 2um PR thickness should be sufficient.  For the typical SiN/PR selectivities in the range of 1-2:1 (SiN/PR), the 2um thickness gives you some overhead to maintain your edge profile.  At some point though, you may need to include other characteristics of your etch, such as profile angle and residues to determine if your process is acceptable.

Robert
   

-----Original Message-----
From:&lt;/pre&gt;</description>
    <dc:creator>Robert Ditizio</dc:creator>
    <dc:date>2013-05-09T17:50:42</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18840">
    <title>Re: [mems-talk] Resist thickness for nitride etch</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18840</link>
    <description>&lt;pre&gt;Once the nitride film is etched, fluorine will etch the silicon substrate
very fast, so measurements need to account for that.


On Wed, May 8, 2013 at 11:33 PM, Haider, Ahmad M &amp;lt;ahaider3&amp;lt; at &amp;gt;gatech.edu&amp;gt;wrote:

_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>Andrew Sarangan</dc:creator>
    <dc:date>2013-05-09T17:04:07</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18839">
    <title>Re: [mems-talk] Resist thickness for nitride etch</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18839</link>
    <description>&lt;pre&gt;Hi Ahmad.
I assume that you mean Silicon nitride layer.
It depends on what kind of gas and condition do you use but typically 
in my case more than 2 times thickness of conventional Photo resist 
layer was enough to endure etch process.
With CF4 gas (RF power ~60W, pressure ~60mtorr, ?? SCCM , RIE 2000 
South bay tech.)

Best.

Myung Rae Cho
PhD. candidate
Department of Physics &amp;amp; Astronomy
Seoul National University
Seoul 151-747 Korea
Tel: +82-2-885-2361
Fax: +82-2-882-2361
mobile: +82-10-6475-5495
insammael&amp;lt; at &amp;gt;gmail.com
insammael&amp;lt; at &amp;gt;ydplab.snu.ac.kr

On Thu May  9 05:29:49 2013, Haider, Ahmad M wrote:
_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>MRC gmail</dc:creator>
    <dc:date>2013-05-08T21:26:22</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18838">
    <title>Re: [mems-talk] Resist thickness for nitride etch</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18838</link>
    <description>&lt;pre&gt;It depends on how thick your nitride is, and what chemistry you are using.
I can get about a 1:1 etch selectivity between a positive hard baked resist
and LPCVD silicon nitride, using CF4/O2 in a pure RIE mode.


On Wed, May 8, 2013 at 4:29 PM, Haider, Ahmad M &amp;lt;ahaider3&amp;lt; at &amp;gt;gatech.edu&amp;gt; wrote:

_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>Andrew Sarangan</dc:creator>
    <dc:date>2013-05-08T20:47:42</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18837">
    <title>Re: [mems-talk] Resist thickness for nitride etch</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18837</link>
    <description>&lt;pre&gt;Thanks Lou, I got that. 
The thing is that my Si wafer has a SiN layer on top of which 2 um resist acts a mask. I want to do a plasma(Oxford endpoint RIE) etch exposed portions of SiN (and not Si beneath it). The exposed SiN layer is 400 nm thick and consists of a series of 25 um squares. Overall, if the whole exposed SiN is etched, I should get a step depth of 2.4 um on the profilometer. I etch for 130% of the required etch time to etch all 400 nm of nitride. However, when I measure the step depth on profilometer, it always shows me that the depth is less than 2.4 um. I can't fathom the reason behind it. Could it be because my features are very small?

Thanks
Ahmad

----- Original Message -----
From: "Lou Chomas" &amp;lt;lchomas&amp;lt; at &amp;gt;hotmail.com&amp;gt;
To: "Ahmad M Haider" &amp;lt;ahaider3&amp;lt; at &amp;gt;gatech.edu&amp;gt;
Sent: Thursday, May 9, 2013 12:00:18 AM
Subject: RE: [mems-talk] Resist thickness for nitride etch

Hi Ahmad,     If the layer under the nitride or resist that you are measuring is also etched (silicon, oxide, etc.)  you will measure &lt;/pre&gt;</description>
    <dc:creator>Haider, Ahmad M</dc:creator>
    <dc:date>2013-05-09T04:15:21</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18836">
    <title>Re: [mems-talk] Resist thickness for nitride etch</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18836</link>
    <description>&lt;pre&gt;Hi Lou,

What do you mean by "Be careful to account for any etching into the substrate if you are using a profilometer to measure the thickness." I use the dektak profilometer to measure the thickness in order to verify if the RIE plasma etcher was able to remove all exposed silicon nitride.

Thanks,
Ahmad

----- Original Message -----
From: "Lou Chomas" &amp;lt;lchomas&amp;lt; at &amp;gt;hotmail.com&amp;gt;
To: "General MEMS discussion" &amp;lt;mems-talk&amp;lt; at &amp;gt;memsnet.org&amp;gt;
Sent: Wednesday, May 8, 2013 5:09:30 PM
Subject: Re: [mems-talk] Resist thickness for nitride etch

Ahmad,    That depends a lot on your process.  I would recommend putting some resist down with your pattern on a test wafer and etching for some amount of time.  Pick something less than your total etch, but not too short.  Measure the thickness of the resist before and after and then you can calculate whether the thickness will be sufficient.  Be careful to account for any etching into the substrate if you are using a profilometer to measure the thickness.  If your recipe has a lot of&lt;/pre&gt;</description>
    <dc:creator>Haider, Ahmad M</dc:creator>
    <dc:date>2013-05-09T03:33:17</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18835">
    <title>[mems-talk] Properties of Ca modified Lead Titanate</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18835</link>
    <description>&lt;pre&gt;Hello all,
I need to know the specific heat, thermal conductivity, density, young modulas and Poisson ratio of Ca modified Lead Titanate for finite element analysis.
Any link/source to this kind of information will be greatly appreciated.
Thanks.
Muztoba
_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>Md A Muztoba</dc:creator>
    <dc:date>2013-05-09T02:48:43</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18834">
    <title>Re: [mems-talk] electroform station</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18834</link>
    <description>&lt;pre&gt;Hi Hong,
The wafer cathode holder is critical in electroforming. The contacts must
be sealed off from the plating solution to avoid being welded to your
wafer. Also, a current thief must be used to obtain uniformity. I can help
you with plating tools.

Regards,
Dave

David Roberts (Principal)
Silicon Valley Wafer Plating
Santa Clara, CA (408)469-3203
www.waferplating.com





_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>Dave Roberts</dc:creator>
    <dc:date>2013-05-08T23:34:34</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18833">
    <title>Re: [mems-talk] Resist thickness for nitride etch</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18833</link>
    <description>&lt;pre&gt;Ahmad,    That depends a lot on your process.  I would recommend putting some resist down with your pattern on a test wafer and etching for some amount of time.  Pick something less than your total etch, but not too short.  Measure the thickness of the resist before and after and then you can calculate whether the thickness will be sufficient.  Be careful to account for any etching into the substrate if you are using a profilometer to measure the thickness.  If your recipe has a lot of oxygen, the rate against the resist will likely be very high.
-Lou
       
_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>Lou Chomas</dc:creator>
    <dc:date>2013-05-08T21:09:30</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18832">
    <title>Re: [mems-talk] Remove aluminum mask after DRIE</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18832</link>
    <description>&lt;pre&gt;Hi Jen,
   It might help to do a somewhat aggressive oxygen plasma clean of your
sample in the DRIE to help remove telflon-like polymer from the wafer
surface.  Cleaning after DRIE, in general can be quite challenging.

Cheers,
  Michael


On Sun, May 5, 2013 at 1:59 AM, HJ Rhee &amp;lt;hjrhee00&amp;lt; at &amp;gt;gmail.com&amp;gt; wrote:

_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>Michael Martin</dc:creator>
    <dc:date>2013-05-08T15:51:46</dc:date>
  </item>
  <item rdf:about="http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18831">
    <title>[mems-talk] Resist thickness for nitride etch</title>
    <link>http://permalink.gmane.org/gmane.science.microelectromechanical-systems/18831</link>
    <description>&lt;pre&gt;Hi

I am trying to do an anisotropic etch of 400 nm nitride layer in a RIE machine. A portion of the nitride is protected by a resist layer on top of it. Can you tell approximate how much thickness of resist would I need so that the resist doesn't get stripped off during the nitride etch? 

Thanks,
Ahmad

_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk

&lt;/pre&gt;</description>
    <dc:creator>Haider, Ahmad M</dc:creator>
    <dc:date>2013-05-08T20:29:49</dc:date>
  </item>
  <textinput rdf:about="http://search.gmane.org/?group=$group=gmane.science.microelectromechanical-systems">
    <title>Search Engine</title>
    <description>Search the mailing list at Gmane</description>
    <name>query</name>
    <link>http://search.gmane.org/?group=$group=gmane.science.microelectromechanical-systems</link>
  </textinput>
</rdf:RDF>
